Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRFH5020TR2PBF
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RFQ
3,731
In-stock
Infineon Technologies MOSFET N-CH 200V 5.1A 8PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta), 8.3W (Tc) N-Channel - 200V 5.1A (Ta) 55 mOhm @ 7.5A, 10V 5V @ 150µA 54nC @ 10V 2290pF @ 100V 10V ±20V
IRFH5020TRPBF
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VIEW
RFQ
2,040
In-stock
Infineon Technologies MOSFET N-CH 200V 5.1A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 200V 5.1A (Ta) 55 mOhm @ 7.5A, 10V 5V @ 150µA 54nC @ 10V 2290pF @ 100V 10V ±20V
BSC22DN20NS3GATMA1
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RFQ
3,658
In-stock
Infineon Technologies MOSFET N-CH 200V 7A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V
BSC320N20NS3GATMA1
RFQ
VIEW
RFQ
640
In-stock
Infineon Technologies MOSFET N-CH 200V 36A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 125W (Tc) N-Channel - 200V 36A (Tc) 32 mOhm @ 36A, 10V 4V @ 90µA 29nC @ 10V 2350pF @ 100V 10V ±20V
BSC500N20NS3GATMA1
RFQ
VIEW
RFQ
3,651
In-stock
Infineon Technologies MOSFET N-CH 200V 24A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 96W (Tc) N-Channel - 200V 24A (Tc) 50 mOhm @ 22A, 10V 4V @ 60µA 15nC @ 10V 1580pF @ 100V 10V ±20V
BSC900N20NS3GATMA1
RFQ
VIEW
RFQ
895
In-stock
Infineon Technologies MOSFET N-CH 200V 15.2A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 62.5W (Tc) N-Channel - 200V 15.2A (Tc) 90 mOhm @ 7.6A, 10V 4V @ 30µA 11.6nC @ 10V 920pF @ 100V 10V ±20V
BSC350N20NSFDATMA1
RFQ
VIEW
RFQ
3,289
In-stock
Infineon Technologies MOSFET N-CH 200V 35A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 150W (Tc) N-Channel - 200V 35A (Tc) 35 mOhm @ 35A, 10V 4V @ 90µA 30nC @ 10V 2410pF @ 100V 10V ±20V
BSZ900N20NS3GATMA1
RFQ
VIEW
RFQ
2,613
In-stock
Infineon Technologies MOSFET N-CH 200V 15.2A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 62.5W (Tc) N-Channel - 200V 15.2A (Tc) 90 mOhm @ 7.6A, 10V 4V @ 30µA 11.6nC @ 10V 920pF @ 100V 10V ±20V
BSZ12DN20NS3GATMA1
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VIEW
RFQ
3,399
In-stock
Infineon Technologies MOSFET N-CH 200V 11.3A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 50W (Tc) N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V
BSC12DN20NS3GATMA1
RFQ
VIEW
RFQ
3,804
In-stock
Infineon Technologies MOSFET N-CH 200V 11.3A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 50W (Tc) N-Channel - 200V 11.3A (Tc) 125 mOhm @ 5.7A, 10V 4V @ 25µA 8.7nC @ 10V 680pF @ 100V 10V ±20V
BSZ22DN20NS3GATMA1
RFQ
VIEW
RFQ
1,332
In-stock
Infineon Technologies MOSFET N-CH 200V 7A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 34W (Tc) N-Channel - 200V 7A (Tc) 225 mOhm @ 3.5A, 10V 4V @ 13µA 5.6nC @ 10V 430pF @ 100V 10V ±20V