- Series :
- Operating Temperature :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
938
In-stock
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Infineon Technologies | MOSFET P-CH 30V 22.5A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | P-Channel | - | 30V | 12A (Ta), 22.5A (Tc) | 13 mOhm @ 22.5A, 10V | 2.2V @ 150µA | 73.1nC @ 10V | 3670pF @ 15V | 10V | ±25V | |||
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VIEW |
3,823
In-stock
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Infineon Technologies | MOSFET N-CH 100V 90A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 11.4A (Ta), 90A (Tc) | 10.5 mOhm @ 50A, 10V | 2.4V @ 110µA | 53nC @ 10V | 3900pF @ 50V | 4.5V, 10V | ±20V | |||
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VIEW |
3,086
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.4A (Ta), 100A (Tc) | 7.9 mOhm @ 50A, 10V | 4V @ 110µA | 87nC @ 10V | 5900pF @ 50V | 10V | ±20V | |||
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VIEW |
635
In-stock
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Infineon Technologies | MOSFET N-CH 40V 95A 8PQFN | HEXFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 4.3W (Ta), 94W (Tc) | N-Channel | - | 40V | 95A (Tc) | 3.3 mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | 3174pF @ 25V | 10V | ±20V | |||
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VIEW |
747
In-stock
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Infineon Technologies | MOSFET N-CH 30V 16A PQFN | HEXFET® | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (3x3) | 2.6W (Ta), 33W (Tc) | N-Channel | - | 30V | 16A (Ta), 57A (Tc) | 6.1 mOhm @ 20A, 10V | 2.2V @ 25µA | 26nC @ 10V | 1710pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,518
In-stock
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Infineon Technologies | MOSFET N-CH 30V 100A TDSON8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 125W (Tc) | N-Channel | - | 30V | 32A (Ta), 100A (Tc) | 1.6 mOhm @ 30A, 10V | 2.2V @ 250µA | 131nC @ 10V | 10000pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
2,712
In-stock
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Infineon Technologies | MOSFET P-CH 30V 30A TDSON-8 | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 89W (Tc) | P-Channel | - | 30V | 16A (Ta), 30A (Tc) | 8 mOhm @ 30A, 10V | 2.2V @ 250µA | 122.4nC @ 10V | 6140pF @ 15V | 10V | ±25V | |||
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VIEW |
3,842
In-stock
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Infineon Technologies | MOSFET N-CH 100V 100A 8TDSON | OptiMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 156W (Tc) | N-Channel | - | 100V | 13.8A (Ta), 100A (Tc) | 8.2 mOhm @ 100A, 10V | 2.4V @ 110µA | 104nC @ 10V | 7400pF @ 50V | 4.5V, 10V | ±20V | |||
