- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,274
In-stock
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Infineon Technologies | MOSFET N-CH 100V 11A | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 39W (Tc) | N-Channel | - | 100V | 11A (Ta), 35A (Tc) | 16.4 mOhm @ 21A, 10V | 3.6V @ 50µA | 19nC @ 10V | 733pF @ 50V | 10V | ±20V | |||
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VIEW |
3,887
In-stock
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Infineon Technologies | MOSFET N CH 100V 19A 8QFN | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | - | 100V | 19A (Ta) | 5.2 mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | 2320pF @ 50V | 10V | ±20V | |||
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VIEW |
3,779
In-stock
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Infineon Technologies | MOSFET N-CH 25V 70A PQFN 5X6 | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | 8-PQFN (5x6) | 3.4W (Ta), 46W (Tc) | N-Channel | - | 25V | 30A (Ta), 70A (Tc) | 2.4 mOhm @ 30A, 10V | 2.1V @ 50µA | 32nC @ 10V | 2000pF @ 13V | 4.5V, 10V | ±20V |