Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 25V 29A MX HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 69W (Tc) N-Channel - 25V 29A (Ta), 168A (Tc) 1.6 mOhm @ 29A, 10V 2.1V @ 100µA 38nC @ 4.5V 3480pF @ 13V 4.5V, 10V ±16V
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Infineon Technologies MOSFET N-CH 25V 29A MX HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 69W (Tc) N-Channel - 25V 29A (Ta), 168A (Tc) 1.6 mOhm @ 29A, 10V 2.1V @ 100µA 38nC @ 4.5V 3480pF @ 13V 4.5V, 10V ±16V
IRF6893MTR1PBF
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Infineon Technologies MOSFET N-CH 25V 29A MX HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 69W (Tc) N-Channel - 25V 29A (Ta), 168A (Tc) 1.6 mOhm @ 29A, 10V 2.1V @ 100µA 38nC @ 4.5V 3480pF @ 13V 4.5V, 10V ±16V
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Infineon Technologies MOSFET N-CH 25V 29A MX HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 69W (Tc) N-Channel - 25V 29A (Ta), 168A (Tc) 1.6 mOhm @ 29A, 10V 2.1V @ 100µA 38nC @ 4.5V 3480pF @ 13V 4.5V, 10V ±16V
BSZ013NE2LS5IATMA1
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Infineon Technologies MOSFET N-CH 25V 32A 8SON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel - 25V 32A (Ta), 40A (Tc) 1.3 mOhm @ 20A, 10V 2V @ 250µA 50nC @ 10V 3400pF @ 12V 4.5V, 10V ±16V
BSZ014NE2LS5IFATMA1
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Infineon Technologies MOSFET N-CH 25V 31A 8TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 25V 31A (Ta), 40A (Tc) 1.45 mOhm @ 20A, 10V 2V @ 250µA 33nC @ 10V 2300pF @ 12V 4.5V, 10V ±16V