Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI80N06S4L05AKSA2
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3,704
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Infineon Technologies MOSFET N-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 107W (Tc) N-Channel - 60V 80A (Tc) 8.5 mOhm @ 40A, 4.5V 2.2V @ 60µA 110nC @ 10V 8180pF @ 25V 4.5V, 10V ±16V
IPI120P04P4L03AKSA1
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1,617
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Infineon Technologies MOSFET P-CH TO262-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 136W (Tc) P-Channel - 40V 120A (Tc) 3.4 mOhm @ 100A, 10V 2.2V @ 340µA 234nC @ 10V 15000pF @ 25V 4.5V, 10V ±16V
IPI80N06S4L07AKSA2
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2,264
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Infineon Technologies MOSFET N-CH 60V 80A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 79W (Tc) N-Channel - 60V 80A (Tc) 6.7 mOhm @ 80A, 10V 2.2V @ 40µA 72nC @ 10V 5680pF @ 25V 4.5V, 10V ±16V
IPI90N06S4L04AKSA2
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900
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Infineon Technologies MOSFET N-CH 60V 80A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 150W (Tc) N-Channel - 60V 90A (Tc) 3.7 mOhm @ 90A, 10V 2.2V @ 90µA 170nC @ 10V 13000pF @ 25V 4.5V, 10V ±16V