- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,274
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 30A TO-252 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 52W (Tc) | N-Channel | - | 30V | 30A (Tc) | 11.6 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1300pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,646
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 30A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 52W (Tc) | N-Channel | - | 30V | 30A (Tc) | 12.5 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1355pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,808
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 30A TDSON-8 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.8W (Ta), 43W (Tc) | N-Channel | - | 30V | 11.9A (Ta), 30A (Tc) | 11.9 mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | 1370pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,349
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 5A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 5A (Tc) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
