Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPU103N08N3 G
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3,352
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Infineon Technologies MOSFET N-CH 80V 50A TO251-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 100W (Tc) N-Channel - 80V 50A (Tc) 10.3 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2410pF @ 40V 6V, 10V ±20V
IPD50N04S308ATMA1
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2,466
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3 OptiMOS™ Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 40V 50A (Tc) 7.5 mOhm @ 50A, 10V 4V @ 40µA 35nC @ 10V 2350pF @ 25V 10V ±20V
IPD50N04S308ATMA1
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RFQ
3,983
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 40V 50A (Tc) 7.5 mOhm @ 50A, 10V 4V @ 40µA 35nC @ 10V 2350pF @ 25V 10V ±20V
IPD50N04S308ATMA1
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RFQ
2,624
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Infineon Technologies MOSFET N-CH 40V 50A TO252-3 OptiMOS™ Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 40V 50A (Tc) 7.5 mOhm @ 50A, 10V 4V @ 40µA 35nC @ 10V 2350pF @ 25V 10V ±20V