- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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15 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,509
In-stock
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO263 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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VIEW |
1,172
In-stock
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Infineon Technologies | MOSFET N-CH 25V 100A TDSON-8 | OptiMOS™ | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 69W (Tc) | N-Channel | - | 25V | 29A (Ta), 100A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2800pF @ 12V | 4.5V, 10V | ±20V | |||
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VIEW |
2,150
In-stock
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Infineon Technologies | MOSFET N-CH 120V 35A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 120V | 35A (Tc) | 24 mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
2,122
In-stock
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Infineon Technologies | MOSFET N-CH 30V 25A PQFN | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | - | 2.8W (Ta), 37W (Tc) | N-Channel | - | 30V | 19A (Ta) | 4.7 mOhm @ 20A, 10V | 2.2V @ 50µA | 39nC @ 10V | 2496pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
1,164
In-stock
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | CoolMOS™ C6 | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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VIEW |
1,868
In-stock
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Infineon Technologies | MOSFET N-CH 25V 23A TSDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TSDSON-8-FL | 2.1W (Ta), 69W (Tc) | N-Channel | - | 25V | 23A (Ta), 40A (Tc) | 1.8 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2800pF @ 12V | 4.5V, 10V | ±20V | |||
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VIEW |
3,521
In-stock
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO252 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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VIEW |
1,345
In-stock
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Infineon Technologies | MOSFET N-CH 650V TO-252 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 118W (Tc) | N-Channel | Super Junction | 650V | 15.1A (Tc) | 400 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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VIEW |
2,942
In-stock
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Infineon Technologies | MOSFET N-CH 650V 10.6A TO252-3 | CoolMOS™ | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 83W (Tc) | N-Channel | - | 650V | 10.6A (Tc) | 380 mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39nC @ 10V | 710pF @ 100V | 10V | ±20V | |||
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VIEW |
1,072
In-stock
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Infineon Technologies | MOSFET N-CH 200V 2.5A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 200V | 2.5A (Ta) | 170 mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | 940pF @ 25V | 10V | ±30V | |||
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VIEW |
2,184
In-stock
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Infineon Technologies | MOSFET N-CH 60V 12A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 60V | 12A (Ta) | 9.4 mOhm @ 12A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
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VIEW |
1,187
In-stock
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Infineon Technologies | MOSFET N-CH 25V 33A TDSON-8 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PG-TDSON-8 | 2.5W (Ta), 74W (Tc) | N-Channel | - | 25V | 33A (Ta), 100A (Tc) | 1.4 mOhm @ 30A, 10V | 2V @ 250µA | 39nC @ 10V | 2700pF @ 12V | 4.5V, 10V | ±20V | |||
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VIEW |
1,318
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.3A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | N-Channel | - | 100V | 8.3A (Ta) | 18 mOhm @ 8.3A, 10V | 4.9V @ 100µA | 39nC @ 10V | 1640pF @ 25V | 10V | ±20V | |||
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VIEW |
3,688
In-stock
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Infineon Technologies | MOSFET N-CH 100V 15A | FASTIRFET™, HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PQFN (5x6) | 3.6W (Ta), 104W (Tc) | N-Channel | - | 100V | 15A (Ta), 80A (Tc) | 8 mOhm @ 48A, 10V | 3.6V @ 100µA | 39nC @ 10V | 1685pF @ 50V | 10V | ±20V | |||
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VIEW |
1,156
In-stock
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Infineon Technologies | MOSFET N-CH 100V 35A TO252-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | 71W (Tc) | N-Channel | - | 100V | 35A (Tc) | 24 mOhm @ 35A, 10V | 2.4V @ 39µA | 39nC @ 10V | 2700pF @ 25V | 4.5V, 10V | ±20V | |||
