Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI80N06S407AKSA2
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988
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Infineon Technologies MOSFET N-CH 60V 80A TO262-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3-1 79W (Tc) N-Channel 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 10V ±20V
IPB80N06S407ATMA2
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RFQ
1,139
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Infineon Technologies MOSFET N-CH 60V 80A TO263-3 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 79W (Tc) N-Channel 60V 80A (Tc) - 4V @ 40µA 56nC @ 10V 4500pF @ 25V 10V ±20V
IPP80N06S407AKSA2
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RFQ
1,337
In-stock
Infineon Technologies MOSFET N-CH 60V 80A TO220-3 Automotive, AEC-Q101, OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 79W (Tc) N-Channel 60V 80A (Tc) 7.4 mOhm @ 80A, 10V 4V @ 40µA 56nC @ 10V 4500pF @ 25V 10V ±20V
IPD90N06S407ATMA2
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RFQ
1,863
In-stock
Infineon Technologies MOSFET N-CH 60V 90A TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-11 79W (Tc) N-Channel 60V 90A (Tc) 6.9 mOhm @ 90A, 10V 4V @ 40µA 56nC @ 10V - 10V ±20V