Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
AUIRFB3806
RFQ
VIEW
RFQ
796
In-stock
Infineon Technologies MOSFET N-CH 60V 43A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 71W (Tc) N-Channel - 60V 43A (Tc) 15.8 mOhm @ 25A, 10V 4V @ 50µA 30nC @ 10V 1150pF @ 50V 10V ±20V
IRFZ34E
RFQ
VIEW
RFQ
1,380
In-stock
Infineon Technologies MOSFET N-CH 60V 28A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) N-Channel - 60V 28A (Tc) 42 mOhm @ 17A, 10V 4V @ 250µA 30nC @ 10V 680pF @ 25V 10V ±20V
IRFZ34EPBF
RFQ
VIEW
RFQ
2,237
In-stock
Infineon Technologies MOSFET N-CH 60V 28A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 68W (Tc) N-Channel - 60V 28A (Tc) 42 mOhm @ 17A, 10V 4V @ 250µA 30nC @ 10V 680pF @ 25V 10V ±20V
IPP80R360P7XKSA1
RFQ
VIEW
RFQ
1,726
In-stock
Infineon Technologies MOSFET N-CH 800V 13A TO220-3 CoolMOS™ P7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3 84W (Tc) N-Channel - 800V 13A (Tc) 360 mOhm @ 5.6A, 10V 3.5V @ 280µA 30nC @ 10V 930pF @ 500V 10V ±20V
IRFB3806PBF
RFQ
VIEW
RFQ
3,757
In-stock
Infineon Technologies MOSFET N-CH 60V 43A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 71W (Tc) N-Channel - 60V 43A (Tc) 15.8 mOhm @ 25A, 10V 4V @ 50µA 30nC @ 10V 1150pF @ 50V 10V ±20V