Packaging :
Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Infineon Technologies MOSFET N-CH 60V 130A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 250W (Tc) N-Channel - 60V 130A (Tc) 5.5 mOhm @ 78A, 10V 4V @ 250µA 260nC @ 10V 6760pF @ 25V 10V ±20V
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Infineon Technologies MOSFET N-CH 500V 19A TO-254AA HEXFET® Obsolete Tube MOSFET (Metal Oxide) - Through Hole TO-254-3, TO-254AA (Straight Leads) TO-254AA 250W (Tc) N-Channel - 500V 19A (Tc) 270 mOhm @ 12A, 10V 4V @ 250µA 190nC @ 10V 4300pF @ 25V 10V ±20V