Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSC0501NSIATMA1
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Infineon Technologies MOSFET N-CH 30V 29A 8TDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 50W (Tc) N-Channel Schottky Diode (Body) 30V 29A (Ta), 100A (Tc) 1.9 mOhm @ 30A, 10V 2V @ 250µA 33nC @ 10V 2200pF @ 15V 4.5V, 10V ±20V
BSC010N04LSIATMA1
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930
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Infineon Technologies MOSFET N-CH 40V 37A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 2.5W (Ta), 139W (Tc) N-Channel Schottky Diode (Body) 40V 37A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2V @ 250µA 87nC @ 10V 6200pF @ 20V 4.5V, 10V ±20V
BSC010N04LSIATMA1
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Infineon Technologies MOSFET N-CH 40V 37A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 2.5W (Ta), 139W (Tc) N-Channel Schottky Diode (Body) 40V 37A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2V @ 250µA 87nC @ 10V 6200pF @ 20V 4.5V, 10V ±20V
BSC010N04LSIATMA1
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Infineon Technologies MOSFET N-CH 40V 37A 8TDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 2.5W (Ta), 139W (Tc) N-Channel Schottky Diode (Body) 40V 37A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2V @ 250µA 87nC @ 10V 6200pF @ 20V 4.5V, 10V ±20V
BSZ014NE2LS5IFATMA1
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2,188
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Infineon Technologies MOSFET N-CH 25V 31A 8TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 69W (Tc) N-Channel Schottky Diode (Body) 25V 31A (Ta), 40A (Tc) 1.45 mOhm @ 20A, 10V 2V @ 250µA 33nC @ 10V 2300pF @ 12V 4.5V, 10V ±16V
BSZ0904NSIATMA1
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3,517
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 37W (Tc) N-Channel Schottky Diode (Body) 30V 18A (Ta), 40A (Tc) 4 mOhm @ 30A, 10V 2V @ 250µA 11nC @ 4.5V 1463pF @ 15V 4.5V, 10V ±20V
BSZ0904NSIATMA1
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3,433
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 37W (Tc) N-Channel Schottky Diode (Body) 30V 18A (Ta), 40A (Tc) 4 mOhm @ 30A, 10V 2V @ 250µA 11nC @ 4.5V 1463pF @ 15V 4.5V, 10V ±20V
BSZ0904NSIATMA1
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949
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 37W (Tc) N-Channel Schottky Diode (Body) 30V 18A (Ta), 40A (Tc) 4 mOhm @ 30A, 10V 2V @ 250µA 11nC @ 4.5V 1463pF @ 15V 4.5V, 10V ±20V