Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF4905STRR
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3,298
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Infineon Technologies MOSFET P-CH 55V 74A D2PAK HEXFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 200W (Tc) P-Channel - 55V 74A (Tc) 20 mOhm @ 38A, 10V 4V @ 250µA 180nC @ 10V 3400pF @ 25V 10V ±20V
BSC072N08NS5ATMA1
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1,227
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Infineon Technologies MOSFET N-CH 80V 74A 8TDSON OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) N-Channel - 80V 74A (Tc) 7.2 mOhm @ 37A, 10V 3.8V @ 36µA 29nC @ 10V 2100pF @ 40V 6V, 10V ±20V
BSC072N08NS5ATMA1
RFQ
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825
In-stock
Infineon Technologies MOSFET N-CH 80V 74A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) N-Channel - 80V 74A (Tc) 7.2 mOhm @ 37A, 10V 3.8V @ 36µA 29nC @ 10V 2100pF @ 40V 6V, 10V ±20V
BSC072N08NS5ATMA1
RFQ
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RFQ
3,764
In-stock
Infineon Technologies MOSFET N-CH 80V 74A 8TDSON OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.5W (Ta), 69W (Tc) N-Channel - 80V 74A (Tc) 7.2 mOhm @ 37A, 10V 3.8V @ 36µA 29nC @ 10V 2100pF @ 40V 6V, 10V ±20V
AUIRF4905
RFQ
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RFQ
3,658
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Infineon Technologies MOSFET P-CH 55V 74A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) P-Channel - 55V 74A (Tc) 20 mOhm @ 38A, 10V 4V @ 250µA 180nC @ 10V 3400pF @ 25V 10V ±20V
IRF4905PBF
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RFQ
2,925
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Infineon Technologies MOSFET P-CH 55V 74A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) P-Channel - 55V 74A (Tc) 20 mOhm @ 38A, 10V 4V @ 250µA 180nC @ 10V 3400pF @ 25V 10V ±20V