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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFR3411PBF	RFQ VIEW	PDF RFQ	2,294 In-stock	Infineon Technologies	MOSFET N-CH 100V 32A DPAK		HEXFET®	Not For New Designs	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	130W (Tc)	N-Channel	-	100V	32A (Tc)	44 mOhm @ 16A, 10V	4V @ 250µA	71nC @ 10V	1960pF @ 25V	10V	±20V
	IRFR3411TRPBF	RFQ VIEW	PDF RFQ	2,186 In-stock	Infineon Technologies	MOSFET N-CH 100V 32A DPAK		HEXFET®	Active	Digi-Reel®	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	130W (Tc)	N-Channel	-	100V	32A (Tc)	44 mOhm @ 16A, 10V	4V @ 250µA	71nC @ 10V	1960pF @ 25V	10V	±20V
	IRFR3411TRPBF	RFQ VIEW	PDF RFQ	3,111 In-stock	Infineon Technologies	MOSFET N-CH 100V 32A DPAK		HEXFET®	Active	Cut Tape (CT)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	130W (Tc)	N-Channel	-	100V	32A (Tc)	44 mOhm @ 16A, 10V	4V @ 250µA	71nC @ 10V	1960pF @ 25V	10V	±20V
	IRFR3411TRPBF	RFQ VIEW	PDF RFQ	3,082 In-stock	Infineon Technologies	MOSFET N-CH 100V 32A DPAK		HEXFET®	Active	Tape & Reel (TR)	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	130W (Tc)	N-Channel	-	100V	32A (Tc)	44 mOhm @ 16A, 10V	4V @ 250µA	71nC @ 10V	1960pF @ 25V	10V	±20V

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