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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,199
In-stock
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Infineon Technologies | MOSFET N-CH TO263-3 | CoolMOS™ C7 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 72W (Tc) | N-Channel | - | 650V | 13A (Tc) | 190 mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | 1150pF @ 400V | 10V | ±20V | ||||
VIEW |
944
In-stock
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Infineon Technologies | MOSFET N-CH 650V 7.3A TO263 | CoolMOS™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 63W (Tc) | N-Channel | - | 650V | 7.3A (Tc) | 600 mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23nC @ 10V | 440pF @ 100V | 10V | ±20V | ||||
VIEW |
1,051
In-stock
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Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 56W (Tc) | N-Channel | - | 30V | 50A (Tc) | 6.5 mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | 2400pF @ 15V | 4.5V, 10V | ±20V |