Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB097N08N3 G
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2,726
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Infineon Technologies MOSFET N-CH 80V 70A TO263-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 100W (Tc) N-Channel 80V 70A (Tc) 9.7 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2410pF @ 40V 6V, 10V ±20V
IPB80N04S306ATMA1
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3,672
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Infineon Technologies MOSFET N-CH 40V 80A TO263-3 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 100W (Tc) N-Channel 40V 80A (Tc) 5.4 mOhm @ 80A, 10V 4V @ 52µA 47nC @ 10V 3250pF @ 25V 10V ±20V
IPB50N10S3L16ATMA1
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1,978
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Infineon Technologies MOSFET N-CH 100V 50A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 100W (Tc) N-Channel 100V 50A (Tc) 15.4 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
IRFS4020TRLPBF
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1,237
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Infineon Technologies MOSFET N-CH 200V 18A D2PAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 100W (Tc) N-Channel 200V 18A (Tc) 105 mOhm @ 11A, 10V 4.9V @ 100µA 29nC @ 10V 1200pF @ 50V 10V ±20V