Supplier Device Package :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLU7843-701PBF
RFQ
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RFQ
2,610
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Infineon Technologies MOSFET N-CH 30V 161A IPAK HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 140W (Tc) N-Channel - 30V 161A (Tc) 3.3 mOhm @ 15A, 10V 2.3V @ 250µA 50nC @ 4.5V 4380pF @ 15V 4.5V, 10V ±20V
IRLU7843PBF
RFQ
VIEW
RFQ
2,037
In-stock
Infineon Technologies MOSFET N-CH 30V 161A I-PAK HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 140W (Tc) N-Channel - 30V 161A (Tc) 3.3 mOhm @ 15A, 10V 2.3V @ 250µA 50nC @ 4.5V 4380pF @ 15V 4.5V, 10V ±20V