Supplier Device Package :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPU60R1K0CEBKMA1
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Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 37W (Tc) N-Channel 600V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V 10V ±20V
IPU60R1K0CEAKMA2
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1,763
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Infineon Technologies MOSFET N-CH 600V 4.3A TO-251-3 CoolMOS™ CE Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-251-3 Short Leads, IPak, TO-251AA PG-TO251 61W (Tc) N-Channel 600V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V 10V ±20V
IPU60R1K0CEAKMA1
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2,428
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Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Last Time Buy Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251 - N-Channel 600V 4.3A (Tc) 1 Ohm @ 1.5A, 10V 3.5V @ 130µA 13nC @ 10V 280pF @ 100V - -