Supplier Device Package :
Power Dissipation (Max) :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPU60R1K5CEBKMA1
RFQ
VIEW
RFQ
1,611
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Discontinued at Digi-Key Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 28W (Tc) N-Channel 600V 3.1A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPU60R1K5CEAKMA2
RFQ
VIEW
RFQ
1,501
In-stock
Infineon Technologies MOSFET N-CH 600V 3.1A TO-251-3 CoolMOS™ CE Active Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-251-3 Short Leads, IPak, TO-251AA PG-TO251 49W (Tc) N-Channel 600V 3.1A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V 10V ±20V
IPU60R1K5CEAKMA1
RFQ
VIEW
RFQ
2,049
In-stock
Infineon Technologies MOSFET N-CH 600V TO-251-3 CoolMOS™ CE Last Time Buy Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA PG-TO251-3 - N-Channel 600V 3.1A (Tc) 1.5 Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4nC @ 10V 200pF @ 100V - -