- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,918
In-stock
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Infineon Technologies | MOSFET N-CH 600V 0.8A SOT-223 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223-4 | 1.8W (Ta) | N-Channel | - | 600V | 800mA (Ta) | 950 mOhm @ 2.8A, 10V | 5.5V @ 200µA | 17nC @ 10V | 600pF @ 25V | 10V | ±20V | |||
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VIEW |
1,261
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A TO-220 | TEMPFET® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220AB | - | N-Channel | - | 100V | 10A (Tc) | 200 mOhm @ 5A, 10V | 3.5V @ 1mA | - | 600pF @ 25V | - | - | |||
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VIEW |
3,178
In-stock
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Infineon Technologies | MOSFET N-CH 100V 10A TO-220 | TEMPFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | - | N-Channel | - | 100V | 10A (Tc) | 200 mOhm @ 5A, 10V | 3.5V @ 1mA | - | 600pF @ 25V | - | - | |||
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VIEW |
3,285
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | HEXFET® | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | N-Channel | - | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
1,812
In-stock
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Infineon Technologies | MOSFET N-CH 30V 8.8A PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-PowerVDFN | 6-PQFN (2x2) | 2.1W (Ta) | N-Channel | - | 30V | 8.8A (Ta), 19A (Tc) | 16 mOhm @ 8.5A, 10V | 2.35V @ 25µA | 8.7nC @ 10V | 600pF @ 25V | 4.5V, 10V | ±20V |