Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPN04N60S5
RFQ
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RFQ
3,918
In-stock
Infineon Technologies MOSFET N-CH 600V 0.8A SOT-223 CoolMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223-4 1.8W (Ta) N-Channel - 600V 800mA (Ta) 950 mOhm @ 2.8A, 10V 5.5V @ 200µA 17nC @ 10V 600pF @ 25V 10V ±20V
BTS110E3045ANTMA1
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RFQ
1,261
In-stock
Infineon Technologies MOSFET N-CH 100V 10A TO-220 TEMPFET® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220AB - N-Channel - 100V 10A (Tc) 200 mOhm @ 5A, 10V 3.5V @ 1mA - 600pF @ 25V - -
BTS110NKSA1
RFQ
VIEW
RFQ
3,178
In-stock
Infineon Technologies MOSFET N-CH 100V 10A TO-220 TEMPFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB - N-Channel - 100V 10A (Tc) 200 mOhm @ 5A, 10V 3.5V @ 1mA - 600pF @ 25V - -
IRFHS8342TR2PBF
RFQ
VIEW
RFQ
3,285
In-stock
Infineon Technologies MOSFET N-CH 30V 8.8A PQFN HEXFET® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 6-PQFN (2x2) 2.1W (Ta) N-Channel - 30V 8.8A (Ta), 19A (Tc) 16 mOhm @ 8.5A, 10V 2.35V @ 25µA 8.7nC @ 10V 600pF @ 25V 4.5V, 10V ±20V
IRFHS8342TR2PBF
RFQ
VIEW
RFQ
1,812
In-stock
Infineon Technologies MOSFET N-CH 30V 8.8A PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-PowerVDFN 6-PQFN (2x2) 2.1W (Ta) N-Channel - 30V 8.8A (Ta), 19A (Tc) 16 mOhm @ 8.5A, 10V 2.35V @ 25µA 8.7nC @ 10V 600pF @ 25V 4.5V, 10V ±20V