- Series :
- Packaging :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,958
In-stock
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Infineon Technologies | MOSFET N-CH 60V 13A WDSON-2 | OptiMOS™ | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 38W (Tc) | N-Channel | - | 60V | 13A (Ta), 56A (Tc) | 7.7 mOhm @ 30A, 10V | 4V @ 33µA | 46nC @ 10V | 3700pF @ 30V | 10V | ±20V | |||
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VIEW |
3,371
In-stock
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Infineon Technologies | MOSFET N-CH 60V 13A WDSON-2 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 38W (Tc) | N-Channel | - | 60V | 13A (Ta), 56A (Tc) | 7.7 mOhm @ 30A, 10V | 4V @ 33µA | 46nC @ 10V | 3700pF @ 30V | 10V | ±20V | |||
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VIEW |
1,526
In-stock
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Infineon Technologies | MOSFET N-CH 60V 13A WDSON-2 | OptiMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | 3-WDSON | MG-WDSON-2, CanPAK M™ | 2.2W (Ta), 38W (Tc) | N-Channel | - | 60V | 13A (Ta), 56A (Tc) | 7.7 mOhm @ 30A, 10V | 4V @ 33µA | 46nC @ 10V | 3700pF @ 30V | 10V | ±20V | |||
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VIEW |
1,048
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
1,235
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A D2PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 82W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
935
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 82W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
2,658
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 82W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
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VIEW |
787
In-stock
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Infineon Technologies | MOSFET N-CH 55V 51A TO-220AB | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 82W (Tc) | N-Channel | - | 55V | 51A (Tc) | 13.6 mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | 1460pF @ 25V | 10V | ±20V | |||
