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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRFB3077GPBF	RFQ VIEW	PDF RFQ	2,945 In-stock	Infineon Technologies	MOSFET N-CH 75V 120A TO-220AB		HEXFET®	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	370W (Tc)	N-Channel	-	75V	120A (Tc)	3.3 mOhm @ 75A, 10V	4V @ 250µA	220nC @ 10V	9400pF @ 50V	10V	±20V
	IRFB3077PBF	RFQ VIEW	PDF RFQ	1,889 In-stock	Infineon Technologies	MOSFET N-CH 75V 120A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	370W (Tc)	N-Channel	-	75V	120A (Tc)	3.3 mOhm @ 75A, 10V	4V @ 250µA	220nC @ 10V	9400pF @ 50V	10V	±20V
	IRFB260NPBF	RFQ VIEW	PDF RFQ	3,186 In-stock	Infineon Technologies	MOSFET N-CH 200V 56A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	380W (Tc)	N-Channel	-	200V	56A (Tc)	40 mOhm @ 34A, 10V	4V @ 250µA	220nC @ 10V	4220pF @ 25V	10V	±20V
	IRF3808PBF	RFQ VIEW	PDF RFQ	1,818 In-stock	Infineon Technologies	MOSFET N-CH 75V 140A TO-220AB		HEXFET®	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220AB	330W (Tc)	N-Channel	-	75V	140A (Tc)	7 mOhm @ 82A, 10V	4V @ 250µA	220nC @ 10V	5310pF @ 25V	10V	±20V

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