Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPI50R140CP
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2,430
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Infineon Technologies MOSFET N-CH 550V 23A TO262-3 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 192W (Tc) N-Channel - 550V 23A (Tc) 140 mOhm @ 14A, 10V 3.5V @ 930µA 64nC @ 10V 2540pF @ 100V 10V ±20V
IPI12CNE8N G
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RFQ
3,542
In-stock
Infineon Technologies MOSFET N-CH 85V 67A TO262-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel - 85V 67A (Tc) 12.6 mOhm @ 67A, 10V 4V @ 83µA 64nC @ 10V 4340pF @ 40V 10V ±20V
IPI50N10S3L16AKSA1
RFQ
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RFQ
3,127
In-stock
Infineon Technologies MOSFET N-CH 100V 50A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 100W (Tc) N-Channel - 100V 50A (Tc) 15.7 mOhm @ 50A, 10V 2.4V @ 60µA 64nC @ 10V 4180pF @ 25V 4.5V, 10V ±20V
IPI45N06S4L08AKSA1
RFQ
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RFQ
3,555
In-stock
Infineon Technologies MOSFET N-CH 60V 45A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 71W (Tc) N-Channel - 60V 45A (Tc) 8.2 mOhm @ 45A, 10V 2.2V @ 35µA 64nC @ 10V 4780pF @ 25V 4.5V, 10V ±16V