Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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807
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO262F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262F 28W (Tc) N-Channel 600V 12A (Tc) 520 mOhm @ 6A, 10V 5V @ 250µA 50nC @ 10V 1954pF @ 100V 10V ±30V
AOWF12N65
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2,561
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 650V 12A TO262F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak - 28W (Tc) N-Channel 650V 12A (Tc) 720 mOhm @ 6A, 10V 4.5V @ 250µA 48nC @ 10V 2150pF @ 25V 10V ±30V
AOWF12N60
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3,155
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO262F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak - 28W (Tc) N-Channel 600V 12A (Tc) 550 mOhm @ 6A, 10V 4.5V @ 250µA 50nC @ 10V 2100pF @ 25V 10V ±30V
AOWF12N50
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1,675
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 500V 12A TO262F - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak - 28W (Tc) N-Channel 500V 12A (Tc) 520 mOhm @ 6A, 10V 4.5V @ 250µA 37nC @ 10V 1633pF @ 25V 10V ±30V
AOWF12T60P
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RFQ
3,810
In-stock
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 12A TO262F - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Full Pack, I²Pak TO-262F 28W (Tc) N-Channel 600V 12A (Tc) 520 mOhm @ 6A, 10V 5V @ 250µA 50nC @ 10V 2028pF @ 100V 10V ±30V