Power Dissipation (Max) :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AOI2N60
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 2A TO251A - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 56.8W (Tc) N-Channel 600V 2A (Tc) 4.4 Ohm @ 1A, 10V 4.5V @ 250µA 11nC @ 10V 325pF @ 25V 10V ±30V
AOI2N60A
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881
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 2A - Active Tube MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251A 57W (Tc) N-Channel 600V 2A (Tc) 4.7 Ohm @ 1A, 10V 4.5V @ 250µA 11nC @ 10V 295pF @ 25V 10V ±30V