Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Alpha & Omega Semiconductor Inc. MOSFET N-CHANNEL 60V 19A 8SOIC AlphaSGT™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 3.1W (Ta) N-Channel - 60V 19A (Ta) 4.8 mOhm @ 19A, 10V 2.3V @ 250µA 65nC @ 10V 2500pF @ 30V 4.5V, 10V ±20V
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Alpha & Omega Semiconductor Inc. MOSFET N-CHANNEL 60V 19A TO251B AlphaSGT™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak TO-251B 59.5W (Tc) N-Channel - 60V 19A (Ta) 9.5 mOhm @ 20A, 10V 2.4V @ 250µA 13nC @ 4.5V 1100pF @ 30V 4.5V, 10V ±20V