- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
2,809
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 100V 37A TO262F | AlphaSGT™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | TO-262F | 26W (Tc) | N-Channel | 100V | 37A (Tc) | 9.7 mOhm @ 20A, 10V | 3.4V @ 250µA | 52nC @ 10V | 2785pF @ 50V | 6V, 10V | ±20V | |||
|
VIEW |
3,753
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 11A TO262F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | TO-262F | 27.8W (Tc) | N-Channel | 600V | 11A (Tc) | 650 mOhm @ 5.5A, 10V | 4.5V @ 250µA | 37nC @ 10V | 1990pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,274
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 10A TO262F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | TO-262F | 25W (Tc) | N-Channel | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | 1600pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,028
In-stock
|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 500V 8A TO262F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | TO-262F | 27.8W (Tc) | N-Channel | 500V | 8A (Tc) | 850 mOhm @ 4A, 10V | 4.5V @ 250µA | 28nC @ 10V | 1042pF @ 25V | 10V | ±30V | |||
