Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
GP1M003A090PH
RFQ
VIEW
RFQ
1,024
In-stock
Global Power Technologies Group MOSFET N-CH 900V 2.5A IPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 94W (Tc) N-Channel 900V 2.5A (Tc) 5.1 Ohm @ 1.25A, 10V 4V @ 250µA 17nC @ 10V 748pF @ 25V 10V ±30V
GP1M006A065PH
RFQ
VIEW
RFQ
1,748
In-stock
Global Power Technologies Group MOSFET N-CH 650V 5.5A IPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 120W (Tc) N-Channel 650V 5.5A (Tc) 1.6 Ohm @ 2.75A, 10V 4V @ 250µA 17nC @ 10V 1177pF @ 25V 10V ±30V