- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,422
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 4.2A PWRDI3333 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | PowerDI3333-8 | 980mW (Ta) | N-Channel | - | 100V | 4.2A (Ta) | 80 mOhm @ 3.3A, 10V | 3V @ 250µA | 25.2nC @ 10V | 1172pF @ 50V | 6V, 10V | ±20V | |||
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VIEW |
3,152
In-stock
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Diodes Incorporated | MOSFET P-CH 60V 4.2A UDFN2020-6 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | U-DFN2020-6 (Type F) | 1.97W (Ta) | P-Channel | - | 60V | 4.2A (Ta) | 110 mOhm @ 4.5A, 10V | 3V @ 250µA | 17.2nC @ 10V | 969pF @ 30V | 4.5V, 10V | ±20V |