Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
ZXMN3A01E6TA
RFQ
VIEW
RFQ
1,450
In-stock
Diodes Incorporated MOSFET N-CH 30V 2.4A SOT-23-6 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 SOT-23-6 1.1W (Ta) N-Channel - 30V 2.4A (Ta) 120 mOhm @ 2.5A, 10V 1V @ 250µA 3.9nC @ 10V 190pF @ 25V 4.5V, 10V ±20V
DMG2301LK-7
RFQ
VIEW
RFQ
1,674
In-stock
Diodes Incorporated MOSFET P-CHA 20V 2.4A SOT23 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23 840mW (Ta) P-Channel - 20V 2.4A (Ta) 160 mOhm @ 1A, 4.5V 1V @ 250µA 3.4nC @ 10V 156pF @ 6V 1.8V, 4.5V ±12V