Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMN4015LK3-13
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Diodes Incorporated MOSFET N-CH 40V 13.5A DPAK - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3 2.19W (Ta) N-Channel 40V 13.5A (Ta) 15 mOhm @ 14A, 10V 3V @ 250µA 42nC @ 10V 2072pF @ 20V 4.5V, 10V ±20V
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Diodes Incorporated MOSFET N-CHA 60V 13.5A SO8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.3W (Ta) N-Channel 60V 13.5A (Ta) 6 mOhm @ 20A, 10V 3V @ 250µA 47.1nC @ 10V 2962pF @ 30V 4.5V, 10V ±20V