Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMP3015LSSQ-13
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Diodes Incorporated MOSFET P-CH 30V 13A 8-SO - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) P-Channel 30V 13A (Ta) 11 mOhm @ 13A, 10V 2V @ 250µA 60.4nC @ 10V 2748pF @ 20V 4.5V, 10V ±20V
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Diodes Incorporated MOSFET P-CH 30V 13A 8-SOIC - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2.5W (Ta) P-Channel 30V 13A (Ta) 11 mOhm @ 13A, 10V 2V @ 250µA 60.4nC @ 10V 2748pF @ 20V 4.5V, 10V ±20V
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Diodes Incorporated MOSFET BVDSS: 41V 60V SO-8 T&R 2 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel 60V 14A (Ta) 8 mOhm @ 20A, 10V 2V @ 250µA 41.3nC @ 10V 2090pF @ 30V 4.5V, 10V ±20V