Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
DMG4413LSS-13
RFQ
VIEW
RFQ
2,100
In-stock
Diodes Incorporated MOSFET P-CH 30V 10.5A SOP8L - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 1.7W (Ta) P-Channel 30V 10.5A (Ta) 7.5 mOhm @ 13A, 10V 2.1V @ 250µA 46nC @ 5V 4965pF @ 15V 4.5V, 10V ±20V
DMG7430LFG-7
RFQ
VIEW
RFQ
774
In-stock
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerWDFN PowerDI3333-8 900mW (Ta) N-Channel 30V 10.5A (Ta) 11 mOhm @ 20A, 10V 2.5V @ 250µA 26.7nC @ 10V 1281pF @ 15V 4.5V, 10V ±20V