Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Diodes Incorporated MOSFET N-CH 100V 140A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 187W (Tc) N-Channel - 100V 140A (Tc) 5 mOhm @ 13A, 10V 4V @ 250µA 111.7nC @ 10V 8474pF @ 50V 10V ±20V
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Diodes Incorporated MOSFET BVDSS: 61V 100V,TO220-3,T Automotive, AEC-Q101 Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 2.8W (Ta) N-Channel - 100V 60A (Tc) 28 mOhm @ 20A, 10V 4V @ 250µA 31.9nC @ 10V 1942pF @ 50V 10V ±20V