Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
Default Photo
RFQ
VIEW
RFQ
2,426
In-stock
Diodes Incorporated MOSFET NCH 100V 9.4A 8VDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 155°C (TJ) Surface Mount 8-VDFN Exposed Pad V-DFN3333-8 1W (Ta) N-Channel - 100V 9.4A (Ta), 34A (Tc) 15 mOhm @ 20A, 10V 3.5V @ 250µA 33.3nC @ 10V 1871pF @ 50V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
2,625
In-stock
Diodes Incorporated MOSFET NCH 100V 9.4A 8VDFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 155°C (TJ) Surface Mount 8-VDFN Exposed Pad V-DFN3333-8 1W (Ta) N-Channel - 100V 9.4A (Ta), 34A (Tc) 15 mOhm @ 20A, 10V 3.5V @ 250µA 33.3nC @ 10V 1871pF @ 50V 4.5V, 10V ±20V
ZXMNS3BM832TA
RFQ
VIEW
RFQ
3,279
In-stock
Diodes Incorporated MOSFET N-CH 30V 2A 8-MLP - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-VDFN Exposed Pad 8-MLP, MicroFET (3x2) 1W (Ta) N-Channel Schottky Diode (Isolated) 30V 2A (Ta) 180 mOhm @ 1.5A, 4.5V 700mV @ 250µA 2.9nC @ 4.5V 314pF @ 15V 2.5V, 4.5V ±12V