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- Supplier Device Package :
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- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,603
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 530MA X2DFN0604 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | X2-DFN0604-3 | 820mW (Ta) | P-Channel | 20V | 530mA (Ta) | 1.9 Ohm @ 100mA, 4.5V | 1V @ 250µA | 0.4nC @ 4.5V | 28.7pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
948
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 8.9A 6UDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 820mW (Ta) | N-Channel | 60V | 8.9A (Ta) | 16 mOhm @ 10A, 10V | 3V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
2,944
In-stock
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Diodes Incorporated | MOSFET N-CH 50V 9.1A 6DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN2020 (2x2) | 820mW (Ta) | N-Channel | 50V | 9.1A (Ta) | 15 mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 10V | 902.7pF @ 25V | 4.5V, 10V | ±16V | |||
|
VIEW |
1,850
In-stock
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Diodes Incorporated | MOSFET P-CH 12V U-WLB1010-4 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 1V @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 1.5V, 4.5V | -6V | |||
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|
VIEW |
616
In-stock
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Diodes Incorporated | MOSFET P-CH 12V U-WLB1010-4 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 1V @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 1.5V, 4.5V | -6V | |||
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VIEW |
2,133
In-stock
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Diodes Incorporated | MOSFET P-CH 12V U-WLB1010-4 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 1V @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 1.5V, 4.5V | -6V | |||
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VIEW |
1,789
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 2.6A 4-UFCSP | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 2.6A (Ta) | 102 mOhm @ 500mA, 4.5V | 1V @ 250µA | 3.7nC @ 4.5V | 251pF @ 6V | 1.5V, 4.5V | -5V | |||
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VIEW |
1,230
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 2.6A 4-UFCSP | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 2.6A (Ta) | 102 mOhm @ 500mA, 4.5V | 1V @ 250µA | 3.7nC @ 4.5V | 251pF @ 6V | 1.5V, 4.5V | -5V | |||
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|
VIEW |
2,039
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 2.6A 4-UFCSP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 2.6A (Ta) | 102 mOhm @ 500mA, 4.5V | 1V @ 250µA | 3.7nC @ 4.5V | 251pF @ 6V | 1.5V, 4.5V | -5V | |||
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VIEW |
1,776
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 8.9A 6UDFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 820mW (Ta) | N-Channel | 60V | 8.9A (Ta) | 16 mOhm @ 10A, 10V | 3V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,325
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 8.9A 6UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 820mW (Ta) | N-Channel | 60V | 8.9A (Ta) | 16 mOhm @ 10A, 10V | 3V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,816
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 8.9A 6UDFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 820mW (Ta) | N-Channel | 60V | 8.9A (Ta) | 16 mOhm @ 10A, 10V | 3V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,552
In-stock
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Diodes Incorporated | MOSFET N-CH 50V 9.1A 6DFN | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN2020 (2x2) | 820mW (Ta) | N-Channel | 50V | 9.1A (Ta) | 15 mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 10V | 902.7pF @ 25V | 4.5V, 10V | ±16V | |||
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|
VIEW |
1,942
In-stock
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Diodes Incorporated | MOSFET N-CH 50V 9.1A 6DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN2020 (2x2) | 820mW (Ta) | N-Channel | 50V | 9.1A (Ta) | 15 mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 10V | 902.7pF @ 25V | 4.5V, 10V | ±16V | |||
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|
VIEW |
3,365
In-stock
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Diodes Incorporated | MOSFET N-CH 50V 9.1A 6DFN | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN2020 (2x2) | 820mW (Ta) | N-Channel | 50V | 9.1A (Ta) | 15 mOhm @ 8A, 10V | 2V @ 250µA | 14nC @ 10V | 902.7pF @ 25V | 4.5V, 10V | ±16V | |||
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|
VIEW |
2,883
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 3.3A U-WLB1010-4 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3A (Ta), 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 650mV @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 0.9V, 4.5V | -6V | |||
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|
VIEW |
1,167
In-stock
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Diodes Incorporated | MOSFET P-CH 12V 3.3A U-WLB1010-4 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3A (Ta), 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 650mV @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 0.9V, 4.5V | -6V | |||
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|
VIEW |
3,433
In-stock
|
Diodes Incorporated | MOSFET P-CH 12V 3.3A U-WLB1010-4 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, WLBGA | U-WLB1010-4 | 820mW (Ta) | P-Channel | 12V | 3A (Ta), 3.3A (Ta) | 80 mOhm @ 500mA, 4.5V | 650mV @ 250µA | 5nC @ 4.5V | 350pF @ 6V | 0.9V, 4.5V | -6V | |||
