Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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DMP3065LVT-7
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Diodes Incorporated MOSFET P-CH 30V 4.9A TSOT-26 - Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSOT-26 1.2W (Ta) P-Channel - 30V 4.9A (Ta) 42 mOhm @ 4.9A, 10V 2.1V @ 250µA 12.3nC @ 10V 587pF @ 15V 4.5V, 10V ±20V
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Diodes Incorporated MOSFET P-CH 30V 4.9A TSOT-26 - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSOT-26 1.2W (Ta) P-Channel - 30V 4.9A (Ta) 42 mOhm @ 4.9A, 10V 2.1V @ 250µA 12.3nC @ 10V 587pF @ 15V 4.5V, 10V ±20V
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Diodes Incorporated MOSFET P-CH 30V 4.9A TSOT-26 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 TSOT-26 1.2W (Ta) P-Channel - 30V 4.9A (Ta) 42 mOhm @ 4.9A, 10V 2.1V @ 250µA 12.3nC @ 10V 587pF @ 15V 4.5V, 10V ±20V
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Diodes Incorporated MOSFET N-CH 20V 4.9A SOT23-3 Automotive, AEC-Q101 Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 1.4W N-Channel - 20V 4.9A (Ta) 45 mOhm @ 2.5A, 4.5V 1.5V @ 250µA 4.8nC @ 10V 452pF @ 10V 2.5V, 4.5V ±12V