Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Cree/Wolfspeed MOSFET N-CHANNEL 1200V 28A DIE Z-FET™ Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount Die Die 202W (Tj) N-Channel - 1200V 28A (Tj) 220 mOhm @ 10A, 20V 4V @ 1mA 47.1nC @ 20V 928pF @ 800V 20V +25V, -5V
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2,348
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Cree/Wolfspeed MOSFET N-CHANNEL 1200V 50A DIE Z-FET™ Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount Die Die 313mW (Tj) N-Channel - 1200V 50A (Tj) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
C3M0075120J
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1,351
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Cree/Wolfspeed MOSFET N-CH 1200V 30A D2PAK-7 C3M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-8, D²Pak (7 Leads + Tab), TO-263CA D2PAK-7 113.6W (Tc) N-Channel - 1200V 30A (Tc) 90 mOhm @ 20A, 15V 4V @ 5mA 51nC @ 15V 1350pF @ 1000V 15V +19V, -8V
C2M1000170J
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2,922
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Cree/Wolfspeed MOSFET N-CH 1700V 5.3A TO247 C2M™ Active Bulk SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Surface Mount TO-263-7 (Straight Leads) D2PAK (7-Lead) 78W (Tc) N-Channel - 1700V 5.3A (Tc) 1.4 Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13nC @ 20V 200pF @ 1000V 20V +25V, -10V