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Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-µDFN(2x2) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 4A | 46 mOhm @ 4A, 10V | 2.5V @ 100µA | 2.5nC @ 4.5V | 280pF @ 15V |