Power - Max :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Toshiba Semiconductor and Storage MOSFET 2NCH 20V 100MA ES6 - Active Tape & Reel (TR) 150°C Surface Mount SOT-563, SOT-666 150mW ES6 2 P-Channel (Dual) Standard 20V 100mA 8 Ohm @ 50mA, 4V 1V @ 1mA - 12.2pF @ 3V
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Toshiba Semiconductor and Storage MOSFET 2 N-CHANNEL 20V 250MA ES6 - Active Tape & Reel (TR) 150°C Surface Mount SOT-563, SOT-666 250mW ES6 2 N-Channel (Dual) Standard 2000V (2kV) 250mA (Ta) 1.1 Ohm @ 150mA, 4.5V 1V @ 100µA 0.34nC @ 4.5V 36pF @ 10V