- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | |||||||||||||||||||||||
VIEW |
1,890
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.33A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 330mA | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | ||||
VIEW |
3,368
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.5A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 500mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
VIEW |
1,472
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A ES6 | - | Obsolete | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 800mA | 240 mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 90pF @ 10V | ||||
VIEW |
2,364
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.72A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 720mA | 300 mOhm @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | 110pF @ 10V | ||||
VIEW |
3,973
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
VIEW |
3,603
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 100mA | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | ||||
VIEW |
3,923
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
VIEW |
2,561
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.18A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 180mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V |