- Part Status :
- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
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VIEW |
3,973
In-stock
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Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | |||
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|
VIEW |
1,041
In-stock
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Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Not For New Designs | Tape & Reel (TR) | 150°C (TA) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Standard | 20V | 100mA | 3 Ohm @ 10mA, 4V | 1.1V @ 0.1mA | - | 9.3pF @ 3V | |||
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|
VIEW |
3,923
In-stock
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Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Tape & Reel (TR) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | |||
