- Manufacture :
- Operating Temperature :
- Package / Case :
- FET Type :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW |
2,119
In-stock
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ON Semiconductor | MOSFET 2P-CH 20V 2.8A UDFN | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 500mW | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 2.8A | 50 mOhm @ 4A, 4.5V | 1V @ 250µA | 10.4nC @ 4.5V | 920pF @ 15V | ||||
VIEW |
1,686
In-stock
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Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-2Y1A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 95 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | ||||
VIEW |
1,065
In-stock
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Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 4A 2-1Y1A | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 45 mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | ||||
VIEW |
1,261
In-stock
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Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 4A UDFN6 | - | Active | Cut Tape (CT) | - | Surface Mount | 6-WDFN Exposed Pad | - | 6-UDFN (2x2) | N and P-Channel | Standard | 20V | 4A | - | - | - | - |