- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||
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VIEW |
755
In-stock
|
Nexperia USA Inc. | MOSFET 2P-CH 20V 2.7A HUSON6 | - | Discontinued at Digi-Key | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 485mW | DFN2020-6 | 2 P-Channel (Dual) | Logic Level Gate, 1.8V Drive | 20V | 2.7A | 102 mOhm @ 2.7A, 4.5V | 1V @ 250µA | 8.6nC @ 4.5V | 550pF @ 10V | |||
|
VIEW |
1,608
In-stock
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Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.8A UF6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 500mW | UF6 | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 800mA | 143 mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | |||
|
VIEW |
2,310
In-stock
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ON Semiconductor | MOSFET 2N-CH 20V 2A MCPH6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 800mW | SC-88FL/MCPH6 | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 20V | 2A | 160 mOhm @ 1A, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | 128pF @ 10V | |||
|
VIEW |
997
In-stock
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ON Semiconductor | MOSFET N/P-CH 20V 2A/1.5A MCPH6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | 800mW | 6-MCPH | N and P-Channel | Logic Level Gate, 1.8V Drive | 20V | 2A, 1.5A | 136 mOhm @ 1A, 4.5V | 1.3V @ 1mA | 1.8nC @ 4.5V | 128pF @ 10V | |||
|
VIEW |
3,645
In-stock
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Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 4A UDFN6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 1W | 6-UDFN (2x2) | 2 N-Channel (Dual) | Logic Level Gate, 1.8V Drive | 30V | 4A | 84 mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | |||
