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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Operating Temperature	Mounting Type	Package / Case	Power - Max	Supplier Device Package	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
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	STL8DN6LF3	RFQ VIEW	PDF RFQ	1,401 In-stock	STMicroelectronics	MOSFET 2N-CH 60V 20A 5X6		STripFET™ III	Discontinued at Digi-Key	Cut Tape (CT)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	65W	PowerFlat™ (5x6)	2 N-Channel (Dual)	Logic Level Gate	60V	20A	30 mOhm @ 4A, 10V	3V @ 250µA	13nC @ 10V	668pF @ 25V
	IPG20N06S4L26AATMA1	RFQ VIEW	PDF RFQ	1,725 In-stock	Infineon Technologies	MOSFET 2N-CH 8TDSON		Automotive, AEC-Q101, OptiMOS™	Active	Cut Tape (CT)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	33W	PG-TDSON-8-10	2 N-Channel (Dual)	Logic Level Gate	60V	20A	26 mOhm @ 17A, 10V	2.2V @ 10µA	20nC @ 10V	1430pF @ 25V
	STL7DN6LF3	RFQ VIEW	PDF RFQ	2,408 In-stock	STMicroelectronics	MOSFET 2N-CH 60V 20A 5X6		STripFET™ III	Active	Cut Tape (CT)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	52W	PowerFlat™ (5x6)	2 N-Channel (Dual)	Logic Level Gate	60V	20A	43 mOhm @ 3A, 10V	3V @ 250µA	8.8nC @ 10V	432pF @ 25V
	IPG20N06S4L26ATMA1	RFQ VIEW	PDF RFQ	2,389 In-stock	Infineon Technologies	MOSFET 2N-CH 60V 20A TDSON-8		OptiMOS™	Active	Cut Tape (CT)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	33W	PG-TDSON-8-4	2 N-Channel (Dual)	Logic Level Gate	60V	20A	26 mOhm @ 17A, 10V	2.2V @ 10µA	20nC @ 10V	1430pF @ 25V

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