Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
GLOBAL STOCKS
STL13DP10F6
RFQ
VIEW
RFQ
3,847
In-stock
STMicroelectronics MOSFET 2P-CH 100V 13A PWRFLAT56 DeepGATE™, STripFET™ VI Discontinued at Digi-Key Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 62.5W PowerFlat™ (5x6) 2 P-Channel (Dual) Logic Level Gate 100V 13A 180 mOhm @ 1.7A, 10V 4V @ 250µA 16.5nC @ 10V 864pF @ 25V
IPG20N10S4L35ATMA1
RFQ
VIEW
RFQ
3,865
In-stock
Infineon Technologies MOSFET 2N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) -55°C ~ 175°C (TJ) Surface Mount 8-PowerVDFN 43W PG-TDSON-8-4 2 N-Channel (Dual) Logic Level Gate 100V 20A 35 mOhm @ 17A, 10V 2.1V @ 16µA 17.4nC @ 10V 1105pF @ 25V
STL8DN10LF3
RFQ
VIEW
RFQ
3,067
In-stock
STMicroelectronics MOSFET 2N-CH 100V 20A 5X6 STripFET™ III Active Cut Tape (CT) -55°C ~ 175°C (TJ) Surface Mount 8-PowerVDFN 70W PowerFlat™ (5x6) 2 N-Channel (Dual) Logic Level Gate 100V 20A 35 mOhm @ 4A, 10V 3V @ 250µA 20.5nC @ 10V 970pF @ 25V
IPG20N10S4L22AATMA1
RFQ
VIEW
RFQ
2,644
In-stock
Infineon Technologies MOSFET 2N-CH 100V 20A TDSON-8 OptiMOS™ Active Cut Tape (CT) -55°C ~ 175°C (TJ) Surface Mount 8-PowerVDFN 60W PG-TDSON-8-10 2 N-Channel (Dual) Logic Level Gate 100V 20A 22 mOhm @ 17A, 10V 2.1V @ 25µA 27nC @ 10V 1755pF @ 25V
IPG20N10S4L22ATMA1
RFQ
VIEW
RFQ
3,981
In-stock
Infineon Technologies MOSFET 2N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) -55°C ~ 175°C (TJ) Surface Mount 8-PowerVDFN 60W PG-TDSON-8-4 2 N-Channel (Dual) Logic Level Gate 100V 20A 22 mOhm @ 17A, 10V 2.1V @ 25µA 27nC @ 10V 1755pF @ 25V