Supplier Device Package :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
GLOBAL STOCKS
IPG20N10S4L35ATMA1
RFQ
VIEW
RFQ
3,865
In-stock
Infineon Technologies MOSFET 2N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) -55°C ~ 175°C (TJ) Surface Mount 8-PowerVDFN 43W PG-TDSON-8-4 2 N-Channel (Dual) Logic Level Gate 100V 20A 35 mOhm @ 17A, 10V 2.1V @ 16µA 17.4nC @ 10V 1105pF @ 25V
IPG20N06S2L65AATMA1
RFQ
VIEW
RFQ
1,596
In-stock
Infineon Technologies MOSFET 2N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) -55°C ~ 175°C (TJ) Surface Mount 8-PowerVDFN 43W PG-TDSON-8-10 2 N-Channel (Dual) Logic Level Gate 55V 20A 65 mOhm @ 15A, 10V 2V @ 14µA 12nC @ 10V 410pF @ 25V