Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Operating Temperature Mounting Type Package / Case Power - Max Supplier Device Package FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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BSZ0910NDXTMA1
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Infineon Technologies DIFFERENTIATED MOSFETS OptiMOS™ Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 1.9W (Ta), 31W (Tc) PG-WISON-8 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 9.5A (Ta), 25A (Tc) 9.5 mOhm @ 9A, 10V 2V @ 250µA 5.6nC @ 4.5V 800pF @ 15V
BSZ0909NDXTMA1
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3,926
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Infineon Technologies MOSFET 2 N-CH 30V 20A WISON-8 OptiMOS™ Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 17W PG-WISON-8 2 N-Channel (Dual) Logic Level Gate, 4.5V Drive 30V 20A (Tc) 18 mOhm @ 9A, 10V 2V @ 250µA 2.6nC @ 4.5V 360pF @ 15V
BSC072N03LDGATMA1
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1,885
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Infineon Technologies MOSFET 2N-CH 30V 11.5A 8TDSON OptiMOS™ Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 57W PG-TDSON-8 Dual 2 N-Channel (Dual) Logic Level Gate 30V 11.5A 7.2 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 3500pF @ 15V
BSC150N03LDGATMA1
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3,747
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Infineon Technologies MOSFET 2N-CH 30V 8A 8TDSON OptiMOS™ Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 26W PG-TDSON-8 Dual 2 N-Channel (Dual) Logic Level Gate 30V 8A 15 mOhm @ 20A, 10V 2.2V @ 250µA 13.2nC @ 10V 1100pF @ 15V
BSC750N10NDGATMA1
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2,209
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Infineon Technologies MOSFET 2N-CH 100V 3.2A 8TDSON OptiMOS™ Active Cut Tape (CT) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 26W PG-TDSON-8 Dual 2 N-Channel (Dual) Standard 100V 3.2A 75 mOhm @ 13A, 10V 4V @ 12µA 11nC @ 10V 720pF @ 50V