- Operating Temperature :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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GLOBAL STOCKS | |||||||||||||||||||||||
VIEW |
668
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.5A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 500mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
VIEW |
3,268
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 7.8pF @ 3V | ||||
VIEW |
2,700
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 60V 0.2A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 60V | 200mA | 2.1 Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | ||||
VIEW |
2,229
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.8A ES6 | - | Obsolete | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 800mA | 240 mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 90pF @ 10V | ||||
VIEW |
1,641
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.72A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 720mA | 300 mOhm @ 400mA, 4.5V | 1V @ 1mA | 1.76nC @ 4.5V | 110pF @ 10V | ||||
VIEW |
3,843
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 180mA, 100mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | ||||
VIEW |
1,929
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.18A/0.1A ES6 | - | Not For New Designs | Cut Tape (CT) | 150°C (TA) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Standard | 20V | 100mA | 3 Ohm @ 10mA, 4V | 1.1V @ 0.1mA | - | 9.3pF @ 3V | ||||
VIEW |
2,510
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 30V 0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 100mA | 4 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | ||||
VIEW |
1,471
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 20V 0.1A ES6 | - | Discontinued at Digi-Key | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 100mA | 8 Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | ||||
VIEW |
2,246
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2P-CH 30V 0.1A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 100mA | 12 Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | ||||
VIEW |
1,920
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N/P-CH 20V 0.5A/0.33A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | N and P-Channel | Logic Level Gate | 20V | 500mA, 330mA | 630 mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ||||
VIEW |
1,520
In-stock
|
Toshiba Semiconductor and Storage | MOSFET 2N-CH 20V 0.18A ES6 | - | Active | Cut Tape (CT) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 150mW | ES6 (1.6x1.6) | 2 N-Channel (Dual) | Logic Level Gate | 20V | 180mA | 3 Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V |