- FET Feature :
- Drain to Source Voltage (Vdss) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Operating Temperature | Mounting Type | Package / Case | Power - Max | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
1,330
In-stock
|
Microsemi Corporation | MOSFET 2N-CH 500V 149A SP4 | - | Discontinued at Digi-Key | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 1250W | 2 N-Channel (Half Bridge) | Standard | 500V | 149A | 25 mOhm @ 74.5A, 10V | 4V @ 8mA | 1200nC @ 10V | 29600pF @ 25V | ||||
VIEW |
2,247
In-stock
|
Microsemi Corporation | MOSFET 2N-CH 500V 170A SP4 | - | Discontinued at Digi-Key | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 1250W | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 500V | 170A | 19 mOhm @ 85A, 10V | 5V @ 10mA | 492nC @ 10V | 22400pF @ 25V | ||||
VIEW |
3,484
In-stock
|
Microsemi Corporation | MOSFET 2N-CH 200V 333A SP4 | - | Discontinued at Digi-Key | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 1250W | 2 N-Channel (Half Bridge) | Standard | 200V | 333A | 5 mOhm @ 166.5A, 10V | 4V @ 8mA | 1184nC @ 10V | 40800pF @ 25V | ||||
VIEW |
2,631
In-stock
|
Microsemi Corporation | MOSFET 2N-CH 1000V 68A LP8W | - | Discontinued at Digi-Key | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 1250W | 2 N-Channel (Half Bridge) | Standard | 1000V (1kV) | 68A | 120 mOhm @ 34A, 10V | 5V @ 10mA | 616nC @ 10V | 17400pF @ 25V |